NCCAVS Plasma Applications Group (www.avsusergroups.org)
Advanced Plasma Technology for Semiconductor, Thin Film and Solar Processing
Date: July 14, 2011
Time: 11:00am – 1:00pm (followed by TFUG TechXPots)
Location: SEMICON West TechXPot – SOUTH HALL
Chair: Vladimir Kudriavtsev, vkudriavtsev0 at gmail dot com
This session will include four invited (30 min long) presentations on recent advances in plasma, plasma assisted and vacuum technologies for semiconductor and thin film processing. It includes (but not limited to) plasma diagnostics, source development, process development, plasma etch, plasma bombardment,
plasma assisted CVD, sputtering, RF technology development, plasma process simulations.
Attendance is Free for registered Semicon West/Intersolar attendees. If you have not registered for Semicon West/Intersolar please contact Session Chairperson in advance.
“Capacitive and Inductive RF Plasma Sources for Industrial Applications”, Valery Godyak, RF Plasma Consulting, Brookline, MA
Capacitive and inductive coupled plasmas, correspondingly CCP and ICP, are the most common sources of plasma in many industrial applications. Variety CCP and ICP devices found a wide application in ion sources, lighting and processing of materials for semiconductor chips. The common features, scaling laws, similarity and difference between these large groups of plasma source are discussed in the presentation. Prevailing mechanism of rf power absorption and different modes of both type of discharges are discussed with comment on spread misconceptions and mythology around properties, abilities and limitations of these plasma sources.
Dr. Valery Godyak graduated from San Petersburg Technical University, St. Petersburg, Russia in 1964 with degree of Engineer-Physicist in Physical Electronics and from Moscow State University (MSU), Moscow, Russia with Ph.D in Plasma Physics, respectively in 1964 and 1968. He worked on Relativistic electron sources at Efremov Institute of Electro-Physical Apparatus. From 1972-1980 he was a group leader involved in the basic research of radio frequency discharges at MSU. After his expulsion from MSU for ideological reasons, he worked as an elevator operator and an electrician. In 1984 he immigrated to the United States and joined GTE (currently, Osram Sylvania) where he held the position of Corporate Scientist up to his retirement in 2008. Now Dr. Godyak works as an independent consultant for Industry and Academia. His area of expertise is since, technology of rf discharges, plasma diagnostics and plasma system design. His works are represented in numerous papers and patents. Valery Godyak is honored by the Osram Star, Siemens International Innovation Competition and Osram-Sylvania Innovation awards. He is a Fellow of APS and IEEE, and a winner of the Maxwell Prize for Plasma Physics.
“Nano-fabrication for Patterned Magnetic Storage Media”, Dan Kercher, Hitachi Global Storage Technologies, San Jose, CA
In the magnetic storage industry, bit areal density has always been a crucial benchmark for progress. Rapid annual increases in areal density are quickly driving magnetic layers towards limits in thermal stability, writability, and signal-to-noise ratio. Patterned media has been proposed as a potential solution to overcome these limits and keep the disk drive industry on track with the current trends in areal density growth. Patterned media is a general term for isolating magnetic structures on hard disks, and encompasses both discrete track and bit patterned media. The disk patterning process inserts several demanding nanofabrication steps into the typical magnetic hard disk process flow, including e-beam lithography, directed self assembly, master imprint template fabrication, nano-imprint lithography, and disk etch pattern transfer.
The initial, or master, lithography step requires extremely small features sizes (10-50nm) and strict position accuracy, ~1nm 1sigma. E-beam lithography is typically used but can only take drive the resolution so far. To extend the e-beam patterning resolution, innovative self-assembly methods are being used, in which a directed self assembly of block-copolymer generates defect-free long-range ordered circular track patterns.
A key process for PM disk fabrication is nano-imprint lithography. Nano-imprinting delivers the high throughput, resolution and low cost required for disk production. Since PM uses only a single patterning step (no overlay), tools and processes are greatly simplified compared to what is needed for semiconductor device fabrication. Only one e-beam lithography step is required to generate a master pattern. This is important because the small feature sizes and tolerance requirements will force e-beam exposure to a timescale of days.
After nano-imprinting the patterns need to be transferred into the disk surface by a dry etch process, either reactive ion etching or ion milling. Pattern transfer processes are limited by the high throughput requirements needed to keep up with disk sputtering, typically 1000 disks per hour. Proper processing technology can rapidly produce flyable PM disks that will enable future high storage density disk drives.
This talk will focus on the research efforts of Hitachi GST towards creating a manufacturable process for the fabrication of patterned magnetic storage disks.
“Towards Adaptive Kinetic-Fluid Simulations of Weekly Ionized Plasma”, Vladimir I Kolobov, CFD Research Corp, Huntsville, AL
We will review traditional methods for simulations of plasma devices and processes and describe recent trends towards the development of adaptive kinetic-fluid solvers for gas flows and weakly ionized plasmas. The traditional methods employ computational mesh conforming to boundaries and require substantial user participation in the mesh generation process. We will show examples of plasma reactor simulations for semiconductor manufacturing and discuss some relevant discharge physics including electron kinetics in low-pressure Inductively Coupled Plasmas. The new methods use adaptive Cartesian mesh with embedded boundaries enabling automatic mesh generation with minimal user intervention and dynamic mesh adaptation to solution properties. We will describe a Unified Flow Solver – the next generation computational tool combining several innovations: octree Cartesian mesh, direct Boltzmann solver using discrete velocity method, and Adaptive Mesh and Algorithm Refinement (AMAR) methodology for multi-scale kinetic-fluid simulations of rarefied and continuum flows. We will show examples of plasma simulations with adaptive Cartesian mesh and describe our current research towards expanding AMAR methodology for plasma simulations.
Dr. Vladimir Kolobov is a Technical Fellow and Manager of Plasma Technologies at CFD Research Corporation. He obtained his PhD degree in 1989 in theoretical plasma physics from the St. Petersburg University in Russia. After his Ph.D, he worked at the Institute of Hypersonic Velocities and taught at the Physics Department of the University. He did post-doctoral studies in Universite P. Sabatier, in Toulouse, France, the University of Wisconsin in Madison, and the University of Houston. After joining CFDRC in 1997, he was responsible for the development of commercial software for plasma simulations. During the last seven years, he led the development of adaptive multi-scale computational tools for a broad range of applications from aerospace to nano-science. He was a PI of several successful multi-year SBIR/STTR projects funded by NSF, AFRL, NASA, AFOSR, DARPA and Dept. of Commerce. He was also a PI and Project Manager for numerous industrial projects from GE, Samsung, TEL, Panasonic, MKS Instruments,
ABB, Inficon, and other companies. Dr Kolobov is an expert in theoretical and computational plasma physics, physical kinetics, fluid mechanics and rarefied gas dynamics, the author of over 50 journal articles and numerous conference presentations.
For presentations for this session, please visit the NCCAVS website